DGT409BCA6565 Ver la hoja de datos (PDF) - Dynex Semiconductor

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Fabricante

DGT409BCA6565

Reverse Blocking Gate Turn-off Thyristor

Dynex Semiconductor 

SEMICONDUCTOR

DGT409BCA

0.9x VD

0.9x IT

dVD/dt

0.1x VD

td

tr

tgt

dIFG/dt

IFG

0.1x IFG

VFG

tgs

tgf

tgq

ITAIL

IG(ON)

tw1

0.1x IGQ

QGQ

0.5x IGQM

IGQM

V(RG)BR

Recommended gate conditions to switch off ITCM = 800A:

IFG = 30A

IG(ON) = 4A d.c.

tw1(min) = 20µs

IGQM = 270A typical

diGQ/dt = 30A/µs

QGQ = 2200µC

VRG(min) = 2V

VRG(max) = 15V

These are recommended Dynex Semiconductor conditions. Other conditions are permitted

according to users gate drive specifications.

Fig.2 General switching waveforms

4/11

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