DGT409BCA6565 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DGT409BCA6565

Reverse Blocking Gate Turn-off Thyristor

Dynex Semiconductor 

SEMICONDUCTOR

DGT409BCA

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Rth(j-hs)

Thermal resistance – junction to

heatsink surface

Rth(c-hs) Contact thermal resistance

Tvj

Top/Tstg

Fm

Virtual junction temperature

Operating junction/storage

temperature range

Clamping force

CHARACTERISTICS

Tj =115oC unless stated otherwise

Test Conditions

Min.

Double side cooled

Single side cooled

DC

-

Anode DC

-

Cathode DC

-

Clamping force 32.0kN

With mounting compound

Per contact

-

On-state (conducting)

-

-40

11.0

Max. Units

0.046

0.073

0.124

°C/W

°C/W

°C/W

0.009 °C/W

115

°C

115

°C

15.0

kN

Symbol

Parameter

VTM)

IDM

IRRM

VGT

IGT

IRGM

EON

td

tr

EOFF

tgs

tgf

tgq

QGQ

QGQT

IGQM

On-state voltage

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

Reverse gate cathode current

Turn-on Energy

Delay time

Rise time

Turn-off energy

Storage time

Fall time

Gate controlled turn-off time

Turn-off gate charge

Total turn-off gate charge

Peak reverse gate current

Test Conditions

At 200A peak, IG(ON) = 4A d.c.

VDRM = 6500V, VRG = 0V

VRRM = 6500V

VD = 24V, IT = 100A, Tj = 25oC

VD = 24V, IT = 100A, Tj = 25oC

VRGM = 16V, No gate/cathode resistor

VD = 3000V

IT = 400A, dIT/dt = 150A/µs

IFG = 20A, rise time (tr ) < 1.5µs

IT = 800A, VDM = 3000V

Snubber Cap Cs = 2µC

diGQ/dt = 20A/us

Min. Max. Units

-

4

V

-

100

mA

-

100

mA

-

1

V

-

2

A

-

50

mA

-

2500 mJ

-

3

µs

-

7

µs

-

2500 mJ

µs

See Fig.17 and

Fig.18

µs

µs

-

3600

µC

-

7200

µC

-

350

A

3/11

www.dynexsemi.com

Share Link: