DGT409BCA6565 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DGT409BCA6565

Reverse Blocking Gate Turn-off Thyristor

Dynex Semiconductor 

SEMICONDUCTOR

DGT409BCA

VOLTAGE RATINGS

Type Number

DGT409BCA

Repetitive Peak Off-state

Voltage VDRM (V)

6500

Repetitive Peak Reverse

Voltage VRRM (V)

6500

Conditions

Tvj = 115°C, IDM =, IRRM = 100mA

CURRENT RATINGS

Symbol

ITCM

Parameter

Repetitive peak controllable on-state current

Conditions

VD = 4300V, Tj = 115°C,

dIGQ/dt = 20A/ s, CS = 2 F

SURGE RATINGS

Max.

1500

Units

A

Symbol

Parameter

Test Conditions

ITSM

I2t

diT/dt

Surge (non repetitive) on-state current

I2t for fusing

Critical rate of rise of on-state current

dVD/dt Rate of rise of off-state voltage

LS

Peak stray inductance in snubber

circuit

GATE RATINGS

10ms half sine. Tj = 115°C

10ms half sine. Tj = 115°C

VD = 3000V, IT = 800A, Tj = 115°C, IFG > 20A,

Rise time (tr) > 1.5 s

VD= 3000V; RGK 1.5 , Tj = 115°C

VD= 3000V; VRG -2V, Tj = 115°C

IT = 1500A, VDM = 6000V, Tj = 115oC, dIGQ = 20A/us,

CS = 2.0uF

Max. Units

3.0

45

300

175

1000

200

kA

kA2s

A/ s

V/ s

V/ s

nH

Symbol

Parameter

VRGM

IFGM

PFG(AV)

PRGM

diGQ/dt

tON(min)

tOFF(min)

IRGM

Peak reverse gate voltage

Peak forward gate current

Average forward gate power

Peak reverse gate power

Rate of rise of reverse gate current

Minimum permissible on time

Minimum permissible off time

Continuous reverse gate-cathode

current

Test Conditions

This value may exceeded during turn-off

VRGM = 16V, No gate cathode resistor

Min. Max. Units

-

25

V

20

70

A

-

10

W

-

15

kW

15

60 A/ s

50

-

s

150

-

s

-

50

mA

2/11

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