DGT409BCA(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DGT409BCA
(Rev.:2002)

Reverse Blocking Gate Turn-off Thyristor

Dynex Semiconductor 

DGT409BCA

30

3.0

28

2.8

26

2.6

24

2.4

22

2.2

20

tgf

2.0

18

1.8

16

1.6

14

1.4

12

1.2

10

1.0

8

tgs 0.8

6 Conditions:

0.6

4 Tj = 115˚C, CS = 2µF,

0.4

2 RS = 10Ω, IT = 800A,

0.2

VDM = 3000V

0

0

0 10 20 30 40 50 60 70 80

Rate of rise of reverse gate current, dIGQ/dt - (A/µs)

Fig.17 Gate storage time and fall time vs rate of rise of

reverse gate current

0.1

dc

0.01

0.001

0.0001

0.001 0.01

0.1

1

10

100

Time - (s)

Fig.18 Maximum (limit) transient thermal impedance -

double side cooled

9/11

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