DGT409BCA6565(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DGT409BCA6565 Datasheet PDF : 11 Pages
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THERMAL RATINGS AND MECHANICAL DATA
DGT409BCA
Symbol
Parameter
Conditions
Double side cooled
Rth(j-hs)
Rth(c-hs)
Tvj
TOP/Tstg
-
DC thermal resistance - junction to heatsink Anode side cooled
surface
Cathode side cooled
Contact thermal resistance
Clamping force 12.0kN
With mounting compound
Virtual junction temperature
Operating junction/storage temperature range
Clamping force
per contact
Min. Max. Units
- 0.046 oC/W
- 0.073 oC/W
- 0.124 oC/W
- 0.009 oC/W
-
115
oC
-40 115
oC
11.0 15.0 kN
CHARACTERISTICS
Tj = 115oC unless stated otherwise
Symbol
Parameter
VTM
IDM
IRRM
VGT
IGT
IRGM
EON
t
d
tr
EOFF
tgs
tgf
tgq
Q
GQ
Q
GQT
IGQM
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
Conditions
At 200A peak, I = 4A d.c.
G(ON)
VDRM = 6500V, VRG = 0V
At VRRM = 6500V
VD = 24V, IT = 100A, Tj = 25oC
VD = 24V, IT = 100A, Tj = 25oC
VRGM = 16V, No gate/cathode resistor
V = 3000V
D
I
T
=
400A,
dI /dt
T
=
150A/µs
I
FG
=
20A,
t
r
<
1.5µs
IT = 800A, VDM = 3000V
Snubber Cap CS = 2µF,
diGQ/dt = 20A/µs
Min. Max. Units
-
4
V
-
100 mA
-
100 mA
-
1
V
-
2
A
-
50 mA
- 2500 mJ
-
3
µs
-
7
µs
- 2500 mJ
See Figs. 16 and 17 µs
See Figs. 16 and 17 µs
See Figs. 16 and 17 µs
-
3600 µC
-
7200 µC
-
350
A
3/11
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