DGT409BCA6565(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
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DGT409BCA6565 Datasheet PDF : 11 Pages
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DGT409BCA
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Tj = 115˚C unless staed otherwise
Symbol
Parameter
Conditions
Max. Units
VDRM
VRRM
ITCM
ITSM
I2t
Repetitive peak off-state voltage
IDM = 100mA
Repetitive peak reverse voltage
IRRM = 100mA
Repetitive peak controllable on-state current VD = 4300V, diGQ/dt = 20A/µs, CS = 2.0µF
Surge (non-repetitive) on-state current
10ms half sine.
I2t for fusing
10ms half sine.
6500
V
6500
V
1500
A
3
kA
45 x 103 A2s
di /dt
T
Critical rate of rise of on-state current
dVD/dt Rate of rise of off-state voltage
LS
Peak stray inductance in snubber circuit
VD = 3000V, IT = 800A, IFG > 20A, tr > 1.5µs
300
VD = 3000V, RGK ≤ 1.5Ω
175
VD = 3000V, VRG = –2V
1000
IT = 1500A, VDM = 6000V, dIGQ/dt = 20A/µs, CS = 2µF 200
A/µs
V/µs
V/µs
nH
GATE RATINGS
Symbol
Parameter
VRGM
I
FGM
PFG(AV)
P
RGM
diGQ/dt
tON(min)
tOFF(min)
IRGM
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
Continuous reverse gate-cathode current
Conditions
Min. Max. Units
This value may be exceeded during turn-off
-
25
V
-
20
70
A
-
-
10
W
-
-
15 kW
-
15
60 A/µs
-
50
-
µs
-
150
-
µs
VRGM = 16V, No gate cathode resistor
-
50 mA
2/11
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