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MC33661PEF

Local Interconnect Network (LIN) Enhanced Physical Interface with Selectable Slew Rate

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics (continued)

Characteristics noted under conditions 7.0 V  VSUP  18 V, -40C  TA  125 C, GND = 0 V, unless otherwise noted.

Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

LIN PIN (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE)

Low Level Bus Voltage (Dominant State)

External Bus Pull-up 500 

VDOM

V

—

—

1.4

High Level Bus Voltage (Recessive State)

TXD HIGH, IOUT = 1.0 A

Internal Pull-up Resistor to VSUP (Normal mode)

Internal Pull-up Current Source (Sleep mode)

Overcurrent Shutdown Threshold

Leakage Current to GND

Recessive State, 8.0 V  VSUP  18 V, 8.0 V  VLIN  18 V

GND Disconnected, VGND = VSUP, VLIN at - 18 V

VSUP Disconnected, VLIN at +18 V

VREC

V

VSUP - 1.0

—

—

RPU

20

30

47

k

IPU

—

20

—

A

IOV-CUR

50

75

150

mA

ILEAK

0

3.0

20

A

- 1.0

—

1.0

mA

—

1.0

10

A

LIN Receiver, Low Level Input Voltage

TXD HIGH, RXD LOW

LIN Receiver, High Level Input Voltage

TXD HIGH, RXD HIGH

LIN Receiver Threshold Center

(VLINH - VLINL) / 2

LIN Receiver Input Voltage Hysteresis

VLINH - VLINL

LIN Wake-up Threshold Voltage

INH OUTPUT PIN

VLINL

V

0.0 VSUP

—

0.4 VSUP

VLINH

V

0.6 VSUP

—

VSUP

VLINTH

V

0.475 VSUP 0.5 VSUP 0.525 VSUP

VLINHYST

—

V

—

0.175 VSUP

VLINWU

—

0.5 VSUP

—

V

Driver ON Resistance (Normal mode)

Leakage Current (Sleep mode)

0.0 V < VINH < VSUP

INHON

—

35

70



ILEAK

A

0

—

5.0

WAKE INPUT PIN

Typical Wake-up Threshold Voltage (EN = 0 V, 7.0 V  VSUP  18 V) (5)

VWUTH

V

HIGH-to-LOW Transition

0.3 VSUP 0.43 VSUP 0.55 VSUP

LOW-to-HIGH Transition

0.4 VSUP 0.55 VSUP 0.65 VSUP

Wake-up Threshold Voltage Hysteresis

VWUHYST

0.1 VSUP 0.16 VSUP 0.2 VSUP

V

WAKE Input Current

VWAKE < 27 V

IWU

A

—

1.0

5.0

Notes

4. This parameter is guaranteed by design; however, it is not production tested.

5. When VSUP > 18 V, the wake-up voltage thresholds remain identical to the wake-up thresholds at 18 V.

33661

6

Analog Integrated Circuit Device Data

Freescale Semiconductor

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