2SK2123 Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Fabricante
2SK2123 Datasheet PDF : 3 Pages
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Power F-MOS FETs
Area of safe operation (ASO)
100
30
IDP
10
ID
3
1
Non repetitive pulse
TC=25˚C
t=100µs
1ms
10ms
0.3
DC
0.1
0.03
0.01
1 3 10 30 100 300 1000
Drain to source voltage VDS (V)
ID VDS
8
7 VGS=15V
10V
6
6.5V
TC=25˚C
5
6V
4
3
5.5V
2
5V
1
50W
4.5V
0
0 10 20 30 40 50 60
Drain to source voltage VDS (V)
VDS VGS
40
TC=25˚C
35
30
25
20
10A
15
10
5A
5
2.5A
0
0 5 10 15 20 25 30
Gate to source voltage VGS (V)
PD Ta
60
(1) TC=Ta
(2) Without heat sink
50
(PD=2W)
40
(1)
30
20
10
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VGS
10
VDS=25V
8
6
TC=0˚C 150˚C
25˚C
100˚C
4
2
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
RDS(on) ID
6
VGS=10V
5
4
3
TC=150˚C
2
100˚C
25˚C
1
0˚C
0
0
2
4
6
8
10
Drain current ID (A)
2SK2123
EAS Tj
120
VDD=50V
ID=5A
100
80
60
40
20
0
25 50 75 100 125 150 175
Junction temperature Tj (˚C)
Vth TC
6
VDS=25V
ID=1mA
5
4
3
2
1
0
0 25 50 75 100 125 150
Case temperature TC (˚C)
| Yfs | ID
3.0
VDS=25V
TC=25˚C
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
Drain current ID (A)
2
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