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Número de pieza
componentes Descripción
2SC5000 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SC5000
Transistor Silicon NPN Epitaxial Type
Toshiba
2SC5000 Datasheet PDF : 3 Pages
1
2
3
2SC5000
I
C
– V
CE
10
80
70
60
8
50
40
6
30
4
20
2
IB = 10 mA
Common emitter
Tc = 25°C
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
1000
500
300
100
50
30
h
FE
– I
C
Tc = 100°C
−
25
25
10
5
3
Common emitter
VCE = 1 V
1
0.01
0.1
1
10
30
Collector current I
C
(A)
V
BE (sat)
– I
C
10
5
Common emitter
3
IC/IB = 20
1
0.5
0.3
−
25 25
Tc = 100°C
0.1
0.05
0.03
0.01
0.01
0.1
1
10
30
Collector current I
C
(A)
I
C
– V
BE
20
Common emitter
VCE = 1 V
16
12
8
100
Tc =
−
25°C
4
25
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage V
BE
(V)
V
CE (sat)
– I
C
10
5
Common emitter
3
IC/IB = 20
1
0.5
0.3
Tc = 100°C
0.1
25
0.05
−
25
0.03
0.01
0.01
0.1
1
10
30
Collector current I
C
(A)
Safe Operating Area
30
IC max (pulsed)
*
IC max
(continuous)
10
*
10 ms
*
5
DC operation
3
Tc = 25°C
1 ms
*
100 µs
*
100 ms
*
1
0.5
0.3
*
: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
1
35
10
VCEO max
30 50 100
Collector-emitter voltage V
CE
(V)
2
2004-07-26
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