2SB680 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SB680

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB680

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA ;IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -10mA ;IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A

VBE(on) Base-Emitter On Voltage

IC= -10A ; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -50V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -2A ; VCE= -5V

hFE-2

DC Current Gain

IC= -7A ; VCE= -5V

COB

Output Capacitance

fT

Current-Gain—Bandwidth Product

VCB= -10V; ftest= 1MHz

IC= -2A ; VCE= -5V

MIN TYP. MAX UNIT

-100

V

-5

V

-3.0 V

-2.5 V

-0.1 mA

-0.1 mA

40

140

15

900

pF

6

MHz

‹ hFE-1 Classifications

R

Y

40-80

70-140

isc Website：www.iscsemi.cn

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