2SB680 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB680

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB680

DESCRIPTION

·High Power Dissipation-

: PC= 100W(Max.)@TC=25℃

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -100V(Min.)

·Complement to Type 2SC1080

APPLICATIONS

·Designed for audio power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-100

V

VCEO Collector-Emitter Voltage

VEBO Emitter-Base Voltage

IC

Collector Current-Continuous

IE

Emitter Current-Continuous

Collector Power Dissipation

PC

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature

-100

V

-5

V

-12

A

12

A

100

W

150

℃

-65~150 ℃

isc Website：www.iscsemi.cn

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