2N7002KG Ver la hoja de datos (PDF) - Secos Corporation.
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2N7002KG Datasheet PDF : 5 Pages
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Elektronische Bauelemente
2N7002KG
190 mA, 60 V, RDS(ON) = 2 Ω
N-Ch Small Signal MOSFET with Gate Protection
N-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ.2 Max. Unit
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Forward Transconductance2
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current2
Drain-Source On-Resistance2
Diode Forward Voltage
Dynamic2
V(BR)DSS
VGS(th)
gfs
60
1.0
100
-
-
IGSS
-
-
-
-
IDSS
-
-
800
ID(ON)
500
-
rDS(ON)
-
VDS(ON)
-
-
-
VGS = 0, ID = 10uA
V
- 2.5
VDS = VGS, ID = 250uA
-
-
mS VDS = 10V, ID = 200 mA
- ±10 μA VDS = 0, VGS = ±20V
- ±150
VDS = 0, VGS = ±10V
- ±1000
VDS=0,VGS=±10V,TJ=85°C
- ±100 nA VDS = 0, VGS = ±5V
- 10
VDS = 50, VGS = 0
- 100
VDS = 50V, VGS=0, TJ=85°C
-
1
VDS = 60V, VGS = 0
μA
- 500
VDS=60V, VGS=0, TJ=125°C
-
-
VGS = 10V, VDS = 7.5V
mA
-
-
VGS = 4.5V, VDS = 10V
-
2
VGS = 10V, IDS = 500mA
Ω
-
4
VGS = 4.5V, IDS = 200mA
-
1.3
V IS = 200mA, VGS = 0
Total Gate Charge
Input Capacitance
Qg
Ciss
-
0.4 0.6 nC VDS=10V,VGS=4.5V,ID=250mA
- 30 -
Output Capacitance
Reverse Transfer Capacitance
Switching2,3
Coss
Crss
-
6
-
- 2.5 -
pF VDS=25V, VGS=0V, f=1MHz
Turn-On Time
t(ON)
-
- 25
Turn-Off Time
t(OFF)
-
- 35
Notes:
1. TA = 25°C unless otherwise noted.
2. For DESIGN AID ONLY, not subject to production testing.
3. Pulse test: PW ≦ 300μs duty cycle ≦ 2%
4. Switching time is essentially independent of operating temperature.
VDD=30V,RL=150Ω,ID=
nS
200mA,VGEN=10V,RG=10Ω
01-December-2008 Rev. B
Page 2 of 5
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