2N5240 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2N5240 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5240
DESCRIPTION
·High Voltage-
: VCEO(SUS)= 300V(Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in series regulators, power amplifiers,
inverters, deflection circuits, switching regulators, and
high-voltage bridge amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCER(SUS)
Collector-Emitter Voltage
RBE≤50Ω
VCEO(SUS) Collector-Emitter Voltage
375
V
350
V
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
IB
Base Current
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
2
A
100
W
200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.75 ℃/W
isc Website：www.iscsemi.cn
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