2731-100M Ver la hoja de datos (PDF) - Microsemi Corporation

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2731-100M

100 Watts, 36 Volts, 250µs, 10% Radar 2700-3100 MHz

Microsemi Corporation 

2731-100MR1

2731-100M

100 Watts, 36 Volts, 250µs, 10%

Radar 2700-3100 MHz

GENERAL DESCRIPTION

The 2731-100M is an internally matched, COMMON BASE bipolar transistor

capable of providing 100 Watts of pulsed RF output power at 250µs pulse

width, 10% duty factor across the 2700 to 3100 MHz band. The transistor

prematch and test fixture has been optimized through the use of 10 Ohm TRL

Analysis. This ceramic sealed transistor is specifically designed for S-band

radar applications. It utilizes gold metallization and emitter ballasting to

provide high reliability and supreme ruggedness.

CASE OUTLINE

55KS-1

Common Base

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25°C1

575 W

Maximum Voltage and Current

Collector to Base Voltage (BVces)

Emitter to Base Voltage (BVebo)

Collector Current (Ic)

Maximum Temperatures

65 V

3.0 V

15.0 A

Storage Temperature

-65 to +200 °C

Operating Junction Temperature +200 °C

ELECTRICAL CHARACTERISTICS @ 25°C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

Pout

Pg

ηc

Rl

Pd

VSWR-T

Power Output

Power Gain

Collector Efficiency

Return Loss

Pulse Droop

Load Mismatch Tolerance

F=2700-3100 MHz

Pulse Width = 250 µs

Duty Factor = 10 %

Power Input = 16W

Vcc = +36V

F = 2700, 2900, 3100 MHz

FUNCTIONAL CHARACTERISTICS @ 25°C

BVebo

BVces

hFE

θjc1

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC – Current Gain

Thermal Resistance

Ie = 30 mA

Ic = 120 mA

Vce = 5V, Ic = 600 mA

MIN

100

8.0

40

-7

TYP

115

8.5

MAX

140

9.4

0.6

2:1

UNITS

W

dB

%

dB

dB

3.0

V

65

V

15

0.43 °C/W

Issue March 2006

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit

our web site at www.microsemi.com or contact our factory direct.

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