1N5617 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
1N5617 Datasheet PDF : 4 Pages
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1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP UNIT
Maximum instantaneous
forward voltage
1.0 A
VF
1.2
V
Maximum DC reverse
current at rated DC
blocking voltage
TA= 25 °C
IR
TA= 100 °C
0.5
μA
25
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
150
250
300
500
ns
Typical junction
capacitance
4.0 V, 1 MHz
CJ
25
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP
Typical thermal resistance
RJA (1)
45
Note
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
1N5619GP-E3/54
0.425
54
1N5619GP-E3/73
0.425
73
BASE QUANTITY
4000
2000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.00
0.75
0.50
0.25
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
25
50
75
100
125
150
175
Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curve
60
50
TA = 55 °C
8.3 ms Single Half Sine-Wave
40
30
20
10
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
Revision: 07-Nov-16
2
Document Number: 88522
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