CMHD3595 Ver la hoja de datos (PDF) - Central Semiconductor
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CMHD3595 Datasheet PDF : 3 Pages
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CMHD3595
SURFACE MOUNT
LOW LEAKAGE
SILICON DIODE
SOD-123 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMHD3595 is
a silicon diode, manufactured by the epitaxial planar
process, epoxy molded in a surface mount package,
designed for high conductance applications requiring
low leakage.
MARKING CODE: C95
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Peak Working Reverse Voltage
Average Forward Current
Continuous Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current, tp=1.0s
Peak Forward Surge Current, tp=1.0μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
VRWM
IO
IF
if
IFSM
IFSM
PD
TJ, Tstg
ΘJA
150
125
150
225
600
500
4.0
400
-65 to +150
312.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IR
VR=125V
IR
VR=125V, TA=125°C
IR
VR=125V, TA=150°C
IR
VR=30V, TA=125°C
BVR
IR=100μA
150
VF
IF=1.0mA
0.54
VF
IF=5.0mA
0.62
VF
IF=10mA
0.65
VF
IF=50mA
0.75
VF
IF=100mA
0.79
VF
IF=200mA
0.83
CJ
VR=0, f=1.0MHz
trr
VR=3.5V, IF=10mA, RL=1.0kΩ
MAX
1.0
2.0
5.0
300
0.69
0.77
0.80
0.88
0.92
1.00
8.0
3.0
UNITS
V
V
mA
mA
mA
mA
A
mW
°C
°C/W
UNITS
nA
μA
μA
nA
V
V
V
V
V
V
V
pF
μs
R6 (17-June 2019)
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