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1032 Ver la hoja de datos (PDF) - Lattice Semiconductor

Número de pieza
componentes Descripción
Fabricante
1032
Lattice
Lattice Semiconductor Lattice
1032 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Specifications ispLSI 1032/883
Switching Test Conditions
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Time
3ns 10% to 90%
Input Timing Reference Levels
1.5V
Output Timing Reference Levels
1.5V
Output Load
See figure 2
3-state levels are measured 0.5V from steady-state
active level.
Table 2- 0003
Figure 2. Test Load
Device
Output
+ 5V
R1
R2
Test
Point
CL*
Output Load Conditions (see figure 2)
Test Condition
A
B Active High
Active Low
Active High to Z
C at V - 0.5V
OH
Active Low to Z
at V + 0.5V
OL
R1
470
470
470
R2
390
390
390
390
390
CL
35pF
35pF
35pF
5pF
5pF
*CL includes Test Fixture and Probe Capacitance.
DC Electrical Characteristics
Over Recommended Operating Conditions
SYMBOL
VOL
VOH
IIL
IIH
IIL-isp
IIL-PU
IOS1
ICC2,4
PARAMETER
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
isp Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
CONDITION
IOL =8 mA
IOH =-4 mA
0V VIN VIL (MAX.)
3.5V VIN VCC
0V VIN VIL (MAX.)
0V VIN VIL
VCC = 5V, VOUT = 0.5V
VIL = 0.5V, VIH = 3.0V
fTOGGLE = 1 MHz
MIN.
2.4
TYP. 3 MAX.
0.4
-10
10
-150
-150
-200
135 220
UNITS
V
V
µA
µA
µA
µA
mA
mA
1. One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems by tester ground
degradation. Characterized but not 100% tested.
2. Measured using six 16-bit counters.
3. Typical values are at VCC = 5V and TA = 25oC.
4. Maximum ICC varies widely with specific device configuration and operating frequency. Refer to the Power Consumption sec-
tion of this datasheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate maximum
ICC.
0007A-32 mil
4

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