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SB1640 Ver la hoja de datos (PDF) - Micro Electro Magnetical Tech

Número de pieza
componentes Descripción
Fabricante
SB1640
MEMT
Micro Electro Magnetical Tech MEMT
SB1640 Datasheet PDF : 1 Pages
1
Micro-Electro-Magnetical Tech Co.
SCHOTTKY DIE SPECIFICATION
General Description: 40 V 15 A Standard VF
TYPE: SB1640
Single Anode
ELECTRICAL CHARACTERISTICS
DC Blocking Voltage: Ir=1mA(for wafer form)
Ir=0.5mA (for dice form)
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
@ 15 Ampere, Ta=25°C
SYM
VRRM
IFAV
VF MAX
Spec. Limit
40
15
0.55
Die Sort UNIT
42.5
Volt
Amp
0.48
Volt
Maximum Instantaneous Reverse Voltage
@ VR= 40 Volt, Ta=25°C
IR MAX
0.7
0.65
mA
Maximum Junction Capacitance @ 0V, 1MHZ
Cj MAX
pF
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
IFSM
300
Amp
Operating Junction Temperature
Tj
-65 to +125
°C
Storage Temperature
TSTG
-65 to +125
°C
Specifications apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
A
C
B
Top-side Metal
SiO2 Passivation
D
P+ Guard Ring
Back-side Metal
DIM
ITEM
um2
Mil2
A Die Size
3116 122.67
B Top Metal Pad Size 3016 118.70
C Passivation Seal
3036 119.50
D Thickness (Min)
254 10.00
Thickness (Max)
305 12.00
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.

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