HWF1682RA Ver la hoja de datos (PDF) - Hexawave, Inc
Número de pieza
componentes Descripción
Fabricante
HWF1682RA Datasheet PDF : 3 Pages
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Features
• High Output Power: P1dB=37 dBm (typ.)
• High Gain: GL=11.5 dB (typ.)
• High Efficiency: PAE =45% (typ.)
• High Linearity: IP3=48 dBm(typ.)
• Class A or Class AB Operation
• Low Cost
Description
The HWF1682RA is a high power GaAs
MESFET designed for various RF and
Microwave applications.
It is presently offered in a low cost,
surface-mountable ceramic package.
Absolute Maximum Ratings
HWF1682RA
L-Band GaAs Power FET
January 2006 V4
Outline Dimensions
RA Package (Ceramic)
VDS[1] Drain to Source Voltage
+15V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
10 mA
TCH Channel Temperature
175°C
TSTG
PT[2]
Storage Temperature
Power Dissipation
-65 to +175°C
15 W
[1] Hexawave recommends that the quiescent
drain-source operating voltage (VDS) should not
exceed 10 Volts.
[2] Mounted on an infinite heat sink.
Electrical Specification at 25°C
Symbol
Parameters
Conditions
Units Min.
IDSS Saturated Drain Current
VDS=3V, VGS=0V
mA 1500
VP
Pinch-off Voltage
gm
Transconductance
VDS=3V, IDS=100 mA
VDS=3V, IDS=1000 mA
V
-3.5
mS
-
Rth
Thermal Resistance
Channel to Case
°C/W
-
P1dB Output Power @1dB Gain
VDS=10V
dBm 36.0
GL
PAE
IP3
Linear Power Gain
Power-added Efficiency (Pout = P1dB)
Third-order Intercept Point[3]
IDS=0.5IDSS
f=2.4 GHz
dB 10.5
%
-
dBm
-
[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP3
Typ.
2000
-2.0
1000
7
37.0
11.5
40
48
Max.
2600
-1.5
-
10
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw All specifications are subject to change without notice.
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