HWL32NPA Ver la hoja de datos (PDF) - Hexawave, Inc
Número de pieza
componentes Descripción
Fabricante
HWL32NPA Datasheet PDF : 4 Pages
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Typical Performance at 25°C
HWL32NPA
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V, IDS=0.5IDSS
Po (dBm)
40
PAE (%)
60
30
20
Gain
10
50
40
Po
Gain
30
Eff
20
10
0
0
0
5
10
15
20 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V, IDS=0.5IDSS
Po (dBm)
40
PAE (%)
60
30
20
Gain
10
50
Po
40
Gain
30
Eff
20
10
0
0
0
5
10
15
20
25 Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
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