AMT8302T56F(2002) Ver la hoja de datos (PDF) - ANADIGICS
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AMT8302T56F Datasheet PDF : 12 Pages
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ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN MAX UNIT
Supply Voltage (VDD)
-
+6.0
V
Optical Input Power (PIN)
-
+5
dBm
Storage Temperature (TSTG)
-65 +125
°C
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Electrical Specifications
PARAMETER
MIN TYP MAX UNIT
Wavelength ( λ)
770 850 860
nm
Detector Diameter
-
100
-
µm
Small Signal Differential Responsivity (1)
(@ 50 MHz)
1000
-
-
V/W
Bandwidth(1)
1400 1900
-
MHz
Low Frequency Cutoff
-
-
300
kHz
Output Resistance
-
40
-
Ω
Optical Overload (2)
0
-
-
dBm
Optical Sensitivity (2)
-19
-
-
dBm
Differential Output Voltage (3)
-
750
-
mV
TRISE and TFALL (20-80%) (3)
-
140
-
ps
Duty Cycle Distortion (3)
-
5
-
%
Total Jitter (3), (4)
-
50
-
ps
Supply Current
-
35
55
mA
Operating Voltage Range
+ 3.0 +3.3 +3.6
V
Operating Case Temperature Range
0
-
80
°C
Notes:
(1) Measured at -14 dBm optical input power with output connected into RL = 100 Ω
(differential)
(2) Measured at 10-10 BER with a 27-1 PRBS at 2.125 Gb/s
(3) Measured with a 27-1 PRBS at 2.125 Gb/s, an input optical power of -3 dBm and
RL = 100 Ω (differential)
(4) 6σ about the center eye crossing
PRELIMINARY DATA SHEET - Rev 1.2
06/2002
AMT8302
3
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