FQP13N10 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQP13N10 Datasheet PDF : 10 Pages
| |||
Marking and Ordering Information
Part Number
FQP13N10
Top Mark
FQP13N10
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VGS = 0 V, ID = 250 μA
100 --
ID = 250 μA, Referenced to 25°C -- 0.09
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
--
--
--
--
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 6.4 A
VDS = 40 V, ID = 6.4 A
2.0 --
4.0
V
-- 0.142 0.18
Ω
-- 6.8
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 345 450
pF
-- 100 130
pF
--
20
25
pF
VDD = 50 V, ID = 12.8 A,
RG = 25 Ω
--
5
20
ns
--
55 120
ns
--
20
50
ns
(Note 4)
--
25
60
ns
VDS = 80 V, ID = 12.8 A,
--
12
16
nC
VGS = 10 V
-- 2.5
--
nC
(Note 4)
--
5.1
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 12.8 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 12.8 A,
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 0.87 mH, IAS = 12.8 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 12.8 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially Independent of Operating Temperature.
--
--
12.8
A
--
--
51.2
A
--
--
1.5
V
--
72
--
ns
-- 0.17
--
μC
©2000 Fairchild Semiconductor Corporation
2
FQP13N10 Rev. C1
www.fairchildsemi.com
Share Link: 