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Fabricante

BU941G
(Rev.:2015)

NPN SILICON TRANSISTOR

Unisonic Technologies 

BU941

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

VCES

500

V

Collector-Emitter Voltage

Emitter-Base Voltage

VCEO

400

V

VEBO

5

V

Collector Current

Collector Peak Current

IC

15

A

ICM

30

A

Base Current

Base Peak Current

IB

1

A

IBM

5

W

TO-3P

155

W

Total Power Dissipation (Tc=25C) TO-220

PD

150

W

TO-263

65

W

Junction Temperature

TJ

+175

C

Storage Temperature

TSTG

-65 ~ +175

C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (Tc=25C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Emitter Sustaining

Voltage

VCEO(SUS)*

IC=1mA, VCLAMP=400V, L=10mH

(see Fig. 1)

Collector Cut-Off Current

Collector Cut-Off Current

ICES

VCE=500V, VBE=0

VCE=500V, VBE=0, TJ=125C

ICEO

VCE=450V, IB=0

VCE=450V, IB=0, TJ=125C

Emitter Cut-off Current

Collector-Emitter Saturation

Voltage

IEBO

VCE(SAT)*

VEB=5V, IC=0

IC=8A, IB=100mA

IC=10A, IB=250mA

IC=12A, IB=300mA

Base-Emitter Saturation Voltage

DC Current Gain

VBE(SAT)*

hFE*

IC=8A, IB=100mA

IC=10A, IB=250mA

IC=12A, IB=300mA

VCE=10V, IC=5A

Diode Forward Voltage

Functional Test

VF

IF=10A

VCC=24V, VCLAMP=400V, L=7mH

(see Functional Test Circuit)

Fall Time

Storage Time

tF

VCC=12V, VCLAMP=300V, VBE=0,

RBE=47Ω, L=7mH, IC=7A, IB=70mA

tS

(see Fig.2)

* Pulsed: Pulse duration=300μs, duty cycle 1.5%

MIN TYP

400

300

10

MAX

100

0.5

100

0.5

20

1.6

1.8

2

2.2

2.5

2.7

UNIT

V

μA

mA

μA

mA

mA

V

V

2.5

V

A

0.5

μs

15

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R203-025.D

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