R1LV1616H-I Ver la hoja de datos (PDF) - Renesas Electronics

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componentes Descripción

Fabricante

R1LV1616H-I

Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)

Renesas Electronics 

R1LV1616H-I Series

Byte Control

R1LV1616H-I

-4SI, -4LI

-5SI

Parameter

Symbol Min Max Min Max Unit Notes

BYTE# setup time

tBS

5



5



ms

BYTE# recovery time

tBR

5



5



ms

Notes: 1. tCHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit

conditions and are not referred to output voltage levels.

2. This parameter is sampled and not 100% tested.

3. At any given temperature and voltage condition, tHZ max is less than tLZ min both for a given

device and from device to device.

4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low

UB#. A write begins at the latest transition among CS1# going low, CS2 going high, WE# going

low and LB# going low or UB# going low. A write ends at the earliest transition among CS1#

going high, CS2 going low, WE# going high and LB# going high or UB# going high. tWP is

measured from the beginning of write to the end of write.

5. tCW is measured from the later of CS1# going low or CS2 going high to the end of write.

6. tAS is measured from the address valid to the beginning of write.

7. tWR is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of

write cycle.

Rev.1.01, Nov.18.2004, page 12 of 19

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