MAX9945 Ver la hoja de datos (PDF) - Unspecified
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Fabricante
MAX9945 Datasheet PDF : 13 Pages
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38V, Low-Noise, MOS-Input,
Low-Power Op Amp
ELECTRICAL CHARACTERISTICS (continued)
(VCC = +15V, VEE = -15V, VIN+ = VIN- = GND = 0, ROUT = 100kΩ to GND, TA = -40°C to +125°C, typical values are at TA = +25°C,
unless otherwise noted.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Output Voltage Low
ROUT = 10kΩ to GND TA = TMIN to TMAX
VOL
ROUT = 100kΩ to
GND
TA = TMIN to TMAX
VEE + VEE +
0.26 0.45
V
VEE + VEE +
0.05 0.15
Output Voltage High
VOH
ROUT = 10kΩ to GND TA = TMIN to TMAX
ROUT = 100kΩ to
GND
TA = TMIN to TMAX
AC ELECTRICAL CHARACTERISTICS
Input Current-Noise Density
Input Voltage Noise
IN
VNP-P
f = 1kHz
f = 0.1Hz to 10Hz
f = 100Hz
Input Voltage-Noise Density
VN
f = 1kHz
f = 10kHz
Gain Bandwidth
GBW
Slew Rate
SR
Capacitive Loading (Note 4)
CLOAD No sustained oscillations
Total Harmonic Distortion
THD
VOUT = 4.5VP-P, AV = 1V/V,
f = 10kHz, ROUT = 10kΩ to GND
POWER-SUPPLY ELECTRICAL CHARACTERISTICS
Power-Supply Voltage Range
Power-Supply Rejection Ratio
Quiescent Supply Current
VCC - VEE
PSRR
ICC
Guaranteed by PSRR, VEE = 0
VCC - VEE = +4.75V to +38V
TA = +25°C
TA = TMIN to TMAX
VCC -
0.45
VCC -
0.15
VCC -
0.24
VCC -
0.03
1
2
25
16.5
15
3
2.2
120
97
+4.75
82
100
400
V
fA/√Hz
µVP-P
nV/√Hz
MHz
V/µs
pF
dB
+38
V
dB
700
µA
850
Note 2: All devices are 100% production tested at TA = +25°C. All temperature limits are guaranteed by design.
Note 3: IN+ and IN- are internally connected to the gates of CMOS transistors. CMOS GATE leakage is so small that it is impractical
to test in production. Devices are screened during production testing to eliminate defective units.
Note 4: Specified over all temperatures and process variation by circuit simulation.
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