TTK101MFV Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

TTK101MFV

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

Unspecified 

Electrical Characteristics (Ta=25°C)

TTK101MFV

Characteristic

Symbol

Test Condition

Min Typ. Max Unit

Drain current

IDSS VDS = 2 V, VGS = 0

A 140 ⎯ 240

µA

B 210 ⎯ 350

Drain current

ID

VDD = 2 V, RL= 2.2kΩ,Cg = 5pF

A 125 ⎯ 260

µA

B 190 ⎯ 370

Gate-source cut-off voltage VGS(OFF) VDS = 2 V, ID = 1μA

Forward transfer admittance |Yfs| VDS = 2 V, VGS = 0V

-0.1 ⎯ -1.0 V

0.65 0.9 ⎯ mS

Gate-drain breakdown

voltage

V(BR)GDO IG = -100 μA

-20

⎯

⎯

V

Input capacitance

Voltage gain

Ciss VDS = 2 V, VGS = 0, f = 1 MHz

Gv VDD = 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz,vin=100mV

⎯

1.8

⎯

pF

A -2.7 -1.3 ⎯

dB

B -1.8 -0.6 ⎯

Delta voltage gain

Delta voltage gain

DGv(f) VDD = 2V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz to 100Hz,vin=100mV ⎯

0

-1.0 dB

DGv(V)

VDD = 2 V to 1.5 V, RL = 2.2 kΩ, Cg = 5pF,f = 1kHz,

vin=100mV

A ⎯ -0.7 -1.4

dB

B ⎯ -1.4 -3.0

Noise voltage

Total harmonic distortion

VN VDD = 2 V, RL = 1 kΩ, Cg = 10 pF, Gv = 80 dB, A-Curve Filter ⎯

15

30 mV

A ⎯ 1.1 ⎯

THD VDD = 2 V, RL = 2.2kΩ, Cg = 5 pF, f = 1kHz, vin = 50mV

%

B ⎯ 0.6 ⎯

Time output stability

tos VDD = 2 V, RL = 2.2 kΩ, Cg = 5 pF

⎯

20

50

ms

Time Output Stability Test Method

a) TEST CIRCUIT

b) TEST SIGNAL

VDD = 2.0V

Vout

VDD

2V

0V

Vout

VDD-ID*RL

0V

50%

90%

tos

2

2014-03-01

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