MAC97A6 Ver la hoja de datos (PDF) - Unspecified
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MAC97A6 Datasheet PDF : 12 Pages
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WeEn Semiconductors
MAC97A6
4Q Triac
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 0.85 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 110 °C;
Fig. 11
ID
off-state current
Dynamic characteristics
VD = 400 V; Tj = 110 °C
dVD/dt
rate of rise of off-state
voltage
VDM = 268 V; Tj = 110 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
dVcom/dt
tgt
rate of change of
commutating voltage
gate-controlled turn-on
time
VD = 400 V; Tj = 50 °C; dIcom/dt = 0.3 A/
ms; IT = 0.84 A; gate open circuit
ITM = 1 A; VD = 400 V; IG = 25 mA; dIG/
dt = 5 A/µs
Min Typ Max Unit
-
1
5
mA
-
2
5
mA
-
2
5
mA
-
4
7
mA
-
1
10
mA
-
5
10
mA
-
1
10
mA
-
2
10
mA
-
1
10
mA
-
1.4 1.9 V
-
0.9 1.5 V
0.1 0.7 -
V
-
3
100 µA
30
45
-
V/µs
-
5
-
V/µs
-
2
-
µs
MAC97A6
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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