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Número de pieza
componentes Descripción
2SK3565 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK3565
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Toshiba
2SK3565 Datasheet PDF : 6 Pages
1
2
3
4
5
6
5
COMMON
SOURCE
Tc
=
25°C
4
PULSE TEST
I
D
– V
DS
8
6
10
5.5
5.25
3
5
2
4.75
1
VGS
=
4.5 V
0
0
4
8
12
16
20
24
DRAIN-SOURCE VOLTAGE V
DS
(V)
2SK3565
6
COMMON
SOURCE
5 Tc
=
25°C
PULSE TEST
4
I
D
– V
DS
10
8
6
5.5
5.25
3
5
2
4.75
1
VGS
=
4 .5V
0
0
10
20
DRAIN-SOURCE VOLTAGE V
DS
30
(V)
I
D
– V
GS
10
COMMON SOURCE
8
VDS
=
20 V
PULSE TEST
6
4
Tc
= −
55°C
2
100
25
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V
GS
10
(V)
V
DS
– V
GS
20
COMMON SOURCE
Tc
=
25
℃
14
PULSE TEST
12
ID
=
5 A
8
3
4
1.5
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
10
Tc
= −
55°C
25
100
1
0.1
0.1
COMMON SOURCE
VDS
=
20 V
PULSE TEST
1
10
DRAIN CURRENT I
D
(A)
R
DS (ON)
– I
D
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
5
3
VGS
=
10 V
、
15V
1
0.01
0.1
1
10
DRAIN CURRENT I
D
(A)
3
2009-09-29
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