IRF9530N Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

IRF9530N

HEXFET® Power MOSFET

Unspecified 

IRF9530N

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+

‚

-

+

Circuit Layout Considerations

• Low Stray Inductance

ƒ

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

-

„

+



RG

VGS

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

+

- VDD

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Inductor Curent

Forward Drop

[ VDD]

Ripple ≤ 5%

[ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

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