2SD2139 Ver la hoja de datos (PDF) - Unspecified

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componentes Descripción

Fabricante

2SD2139

Silicon NPN triple diffusion planar type

Unspecified 

Power Transistors

2SD2139

Silicon NPN triple diffusion planar type

For high-current amplification ratio, power amplification

Unit: mm

s Features

q High foward current transfer ratio hFE

q Satisfactory linearity of foward current transfer ratio hFE

q Allowing supply with the radial taping

s Absolute Maximum Ratings (TC=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

80

V

Collector to emitter voltage VCEO

60

V

Emitter to base voltage

VEBO

6

V

Peak collector current

ICP

6

A

Collector current

IC

3

A

Base current

IB

1

A

Collector power TC=25°C

dissipation

Ta=25°C

PC

15

W

2

Junction temperature

Storage temperature

Tj

150

˚C

Tstg

–55 to +150

˚C

10.0±0.2

5.0±0.1

1.0

90°

0.35±0.1

1.2±0.1

0.65±0.1

1.05±0.1

0.55±0.1

C1.0

2.25±0.2

0.55±0.1

C1.0 1 2 3

2.5±0.2

2.5±0.2

1:Base

2:Collector

3:Emitter

MT4 Type Package

s Electrical Characteristics (TC=25˚C)

Parameter

Symbol

Conditions

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

ICBO

ICEO

IEBO

VCEO

hFE*

VCE(sat)

fT

VCB = 80V, IE = 0

VCE = 40V, IB = 0

VEB = 6V, IC = 0

IC = 25mA, IB = 0

VCE = 4V, IC = 0.5A

IC = 2A, IB = 0.05A

VCE = 12V, IC = 0.2A, f = 10MHz

min

typ

max Unit

100

µA

100

µA

100

µA

60

V

500

2500

1

V

50

MHz

*hFE Rank classification

Rank

Q

P

O

hFE

500 to 1000 800 to 1500 1200 to 2500

1

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