2SD1413 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD1413 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
2SD1413
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
40
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 4mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
20
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2.5
mA
hFE -1
DC Current Gain
IC= 1A; VCE= 2V
2000
hFE -2
DC Current Gain
IC= 3A; VCE= 2V
1000
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IB1= IB2= 6mA
RL= 10Ω; VCC= 30V
PW=20μs; Duty Cycle≤1%
0.1
μs
1.0
μs
0.2
μs
SPTECH website：www.superic-tech.com
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