2SD1413 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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componentes Descripción

Fabricante

2SD1413

Silicon NPN Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Darlington Power Transistor

2SD1413

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 40V(Min)

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max) @IC= 2A

·High DC Current Gain

: hFE= 2000(Min) @ IC= 1A, VCE= 2V

·Complement to Type 2SB1023

APPLICATIONS

·Switching applications

·Hammer driver,pulse motor driver applications

·Power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

3

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

0.5

A

20

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

SPTECH website：www.superic-tech.com

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