BC 817U PN
NPN/PNP Silicon Transistor Array
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07177
4
5
6
3
2
1
VPW09197
Type
BC 817U PN
Marking
1Bs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC-74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient 1)
Junction - soldering point
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJA
RthJS
Value
Unit
45
V
50
5
500
mA
1
A
100
mA
200
330
mW
150
°C
-65 ... 150
≤375
K/W
≤105
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
1
Apr-22-1999