DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HEC4025BP Ver la hoja de datos (PDF) - Unspecified

Número de pieza
componentes Descripción
Fabricante
HEC4025BP
ETC
Unspecified ETC
HEC4025BP Datasheet PDF : 3 Pages
1 2 3
Philips Semiconductors
Triple 3-input NOR gate
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times 20 ns
VDD
V
SYMBOL
TYP.
MAX.
Propagation delays
In On
HIGH to LOW
LOW to HIGH
Output transition times
HIGH to LOW
LOW to HIGH
5
10 tPHL
15
5
10 tPLH
15
5
10 tTHL
15
5
10 tTLH
15
70
135
25
55
20
40
60
120
25
50
15
35
60
120
30
60
20
40
60
120
30
60
20
40
Product specification
HEF4025B
gates
TYPICAL EXTRAPOLATION
FORMULA
ns
43 ns + (0,55 ns/pF) CL
ns
14 ns + (0,23 ns/pF) CL
ns
12 ns + (0,16 ns/pF) CL
ns
33 ns + (0,55 ns/pF) CL
ns
14 ns + (0,23 ns/pF) CL
ns
7 ns + (0,16 ns/pF) CL
ns
10 ns + (1,0 ns/pF) CL
ns
9 ns + (0,42 ns/pF) CL
ns
6 ns + (0,28 ns/pF) CL
ns
10 ns + (1,0 ns/pF) CL
ns
9 ns + (0,42 ns/pF) CL
ns
6 ns + (0,28 ns/pF) CL
Dynamic power
dissipation per
package (P)
VDD
V
TYPICAL FORMULA FOR P (µW)
5
900 fi + ∑ (foCL) × VDD 2
where
10
4000 fi + ∑ (foCL) × VDD 2
fi = input freq. (MHz)
15
10 900 fi + ∑ (foCL) × VDD 2
fo = output freq. (MHz)
CL = load capacitance (pF)
(foCL) = sum of outputs
VDD = supply voltage (V)
January 1995
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]