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FOD815 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza
componentes Descripción
Fabricante
FOD815 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol Parameter
Test Conditions
INPUT
VF
Ct
OUTPUT
Forward Voltage
Terminal Capacitance
IF = 20mA
V = 0, f = 1kHz
ICEO
BVCEO
BVECO
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
VCE = 10V, IF = 0
IC = 0.1mA, IF = 0
IE = 10µA, IF = 0
Min.
35
6
Typ.
1.2
50
Max. Unit
1.4
V
250 pF
1
µA
V
V
Transfer Characteristics (TA = 25°C Unless otherwise specified.)
Symbol DC Characteristic
Test Conditions
IC Collector Current
CTR Current Transfer Ratio(1)
IF = 1mA, VCE = 2V
VCE(sat) Collector-Emitter Saturation IF = 20mA, IC = 5mA
Voltage
fC Cut-Off Frequency
tr Response Time (Rise)
tf
Response Time (Fall)
VCE = 5V, IC = 2mA, RL = 100, -3dB
VCE = 2 V, IC = 10mA, RL = 100
Min.
6
600
Typ.
0.8
Max. Unit
75 mA
7,500 %
1
V
1
6
– KHz
60 300 µs
53 250 µs
Isolation Characteristics
Symbol
Characteristic
Test Conditions
VISO Input-Output Isolation
Voltage
f = 60Hz, t = 1 min, II-O 2µA
Riso Isolation Resistance
Cf Floating Capacitance
DC500V 40~60% R.H.
V = 0, f = 1MHz
Note:
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
Min.
5000
Typ.
Max. Units
– Vac(rms)
5x1010 1x1011
0.6
1
pF
2
FOD815 Series Rev. 1.0.4
www.fairchildsemi.com

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