FDH45N50F Ver la hoja de datos (PDF) - Thinki Semiconductor Co., Ltd.
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FDH45N50F Datasheet PDF : 3 Pages
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FDH45N50F
b) Electrical Parameters:
Symbol
Parameter
VDS Drain-source Voltage
RDS(on)
VGS(th)
Static Drain-to-Source
on-Resistance
Gated Threshold Voltage
IDSS Zero Gate Voltage Drain
Current
IGSS(F) Gated Body Leakage
Current
IGSS(R) Gated Body Leakage
Current
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VGS =0V, ID=250µA
VGS =10V, ID=20A
VDS= VGS, ID=250µA
VDS=500V, VGS = 0V
VGS = +30V,
VGS = -30V,
VGS =0V,
VDS=25V,
f=1.0MHZ
VDS=300V
ID=40A
VGS=10V
Min Typ
500 550
0.09
Max Unit
V
0.12
Ω
2.0 3.0 4.0
V
1.0
uA
100
nA
-100
nA
6500
pF
385
pF
38
pF
101
nC
35
nC
48
nC
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Test Conditions
VDD=300V,ID=25A
VGS=10V,RG=25Ω
Min Typ
62
Max Unit
nS
88
nS
210
nS
95
nS
Symbol
Parameter
ISD S-D Current(Body Diode)
Test Conditions
ISDM Pulsed S-D Current(Body Diode)
VSD Diode Forward Voltage
VGS =0V, IDS=30A
trr Reverse Recovery Time
Qrr Reverse Recvery Charge
TJ=25℃,IF=40A
di/dt=100A/us
*Pulse Test: Pulse Width <= 300µs, Duty Cycle< =2%
Min Typ
40
Max Unit
A
150
A
1.2
V
410
nS
3800
nC
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 2/3
http://www.thinkisemi.com.tw/
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