C1008GR Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

C1008GR

NPN SILICON TRANSISTOR

Unspecified 

K I SEMICONDUCTOR

NPN S I L I C O N T R A N S I S T O

R

C1008

█ LOW FREQUENCY AMPLIFIER MEDIUM

SPEED SWITCHING

█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………800mW

VCBO——Collector-Base Voltage………………………………80V

VCEO——Collector-Emitter Voltage……………………………60V

VEBO——Emitter-Base Voltage………………………………8V

IC——Collector Current……………………………………700mA

TO-92

1―Emitter，E

2―Base，B

3―Collector，C

█ ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

ICBO

IEBO

HFE(1)

VCE(sat)

VBE(sat)

BVCBO

BVCEO

BVEBO

fT

Cob

Characteristics

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector- Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Current Gain-Bandwidth Product

Output Capacitance

█ hFE Classification

Min Typ Max Unit

Test Conditions

100 nA VCB=60V, IE=0

100 nA VEB=5V, IC=0

40

400

VCE=2V, IC=50mA

0.2 0.4 V IC=500mA, IB=50mA

0.86 1.1 V IC=500mA, IB=50mA

80

V IC=100μA, IE=0

60

V IC=10mA, IB=0

8

V IE=10μA，IC=0

30 50

MHz VCE=10V, IC=50mA

8

pF VCB=10V, IE=0，f=1MHz

R

40—80

O

70—140

Y

120—240

GR

240—400

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