FQB9N50CTM Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FQB9N50CTM Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
FQB9N50C
Device
FQB9N50CTM
Package
D2-PAK
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
500
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ Coefficient
ID = 250 μA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 μA
2.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.5 A
--
gFS
Forward Transconductance
VDS = 40 V, ID = 4.5 A
--
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250 V, ID = 9 A,
RG = 25 Ω
VDS = 400 V, ID = 9 A,
VGS = 10 V
--
--
--
(Note 4)
--
--
--
(Note 4)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9 A
--
trr
Reverse Recovery Time
VGS = 0 V, IS = 9 A,
--
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/μs
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 8 mH, IAS = 9 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 9 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Typ
--
0.57
--
--
--
--
--
0.65
6.5
790
130
24
18
65
93
64
28
4
15
--
--
--
335
2.95
Max Unit
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
4.0
V
0.8
Ω
--
S
1030
pF
170
pF
30
pF
45
ns
140
ns
195
ns
125
ns
35
nC
--
nC
--
nC
9
A
36
A
1.4
V
--
ns
--
μC
©2003 Fairchild Semiconductor Corporation
2
FQB9N50C Rev. C1
www.fairchildsemi.com
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