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FQB9N50C_13

N-Channel QFET® MOSFET

Fairchild Semiconductor 

FQB9N50C

N-Channel QFET® MOSFET

500 V, 9 A, 800 mΩ

November 2013

Features

• 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A

• Low Gate Charge (Typ. 28 nC)

• Low Crss (Typ. 24 pF)

• 100% Avalanche Tested

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce

on-state resistance, and to provide superior switching

performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

active power factor correction (PFC), and electronic lamp

ballasts.

D

D

G

S

D2-PAK

G

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

Parameter

Drain-Source Voltage

Drain Current

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

- Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (TC = 25°C)

- Derate above 25°C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

TJ, TSTG

TL

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient, Max.

S

FQB9N50CTM

500

9

5.4

36

± 30

360

9

13.5

4.5

135

1.07

-55 to +150

300

FQB9N50CTM

0.93

62.5

Unit

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Unit

°C/W

©2003 Fairchild Semiconductor Corporation

1

FQB9N50C Rev. C1

www.fairchildsemi.com

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