9997GH Ver la hoja de datos (PDF) - Advanced Power Electronics Corp

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Fabricante

9997GH

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp 

Advanced Power

Electronics Corp.

AP9997GH/J-HF

Halogen-Free Product

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

D

▼ Lower Gate Charge

▼ Fast Switching Characteristic

G

▼ RoHS Compliant & Halogen-Free

S

Description

AP9997 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited for

high current application due to the low connection resistance. The

through-hole version (AP9997GJ) are available for low-profile

applications.

BVDSS

RDS(ON)

ID

100V

120mΩ

11A

G

D

S

TO-252(H)

G

D

S

TO-251(J)

Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)

Symbol

Parameter

Rating

Units

VDS

VGS

ID@TC=25℃

ID@TC=100℃

IDM

PD@TC=25℃

PD@TA=25℃

TSTG

TJ

Drain-Source Voltage

Gate-Source Voltage

Drain Current, VGS @ 10V

Drain Current, VGS @ 10V

Pulsed Drain Current1

Total Power Dissipation

Total Power Dissipation3

Storage Temperature Range

Operating Junction Temperature Range

100

V

+20

V

11

A

7

A

30

A

34.7

W

2

W

-55 to 150

℃

-55 to 150

℃

Thermal Data

Symbol

Parameter

Rthj-c

Rthj-a

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)3

Rthj-a

Maixmum Thermal Resistance, Junction-ambient

Value

3.6

62.5

110

Units

℃/W

℃/W

℃/W

Data and specifications subject to change without notice

1

201411053

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