25N120 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
25N120 Datasheet PDF : 4 Pages
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20
mJ
16
Eon
12
8
VCE = 600 V
VGE = ±15 V
RG = 68 Ω
TVJ = 125°C
250
td(on) ns
200
tr
t
150
100
4
50
0
Eon
0
10
0
20
30 A 40
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
10
mJ
8
Eon
6
4
2
VCE = 600 V
VGE = ±15 V
IC = 20 A
TVJ = 125°C
0
0
50
100 150 200 Ω 250
RG
Fig. 9 Typ. turn on energy vs gate resistor
80
A
ICM 60
40
20
RG = 68 Ω
TVJ = 125°C
0
0 200 400 600 800 1000 1200 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
IXEH 25N120
IXEH 25N120D1
4.0
400
m3.J5
td(off) 3n5s0
Eoff 3.0
2.5
2.0
1.5
VCE = 600 V
VGE = ±15 V
RG = 68 Ω
TVJ = 125°C
300
t
250
200
150
1.0
0.5
0.0
0
Eoff
10
100
50
tf
0
20
30 A 40
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
2.5
mJ
Eoff 2.0
1.5
Eoff
1.0
VCE = 600 V
VGE = ±15 V
IC = 20 A
TVJ = 125°C
td(off)
1250
ns
1000
t
750
500
0.5
250
0.0
0
tf
0
50
100 150 200 Ω 250
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
10
K/W
ZthJC
1
diode
IGBT
single pulse
0.1
1
IXEH 25N120
10
100
1000 ms 10000
t
Fig. 12 Typ. transient thermal impedance
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4-4
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