BB119 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BB119 Datasheet PDF : 4 Pages
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Philips Semiconductors
Variable capacitance diode
Product specification
BB119
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• C10: 17 pF; ratio: 1.3.
APPLICATIONS
• Automatic frequency control.
handbook, halfpagke
a
MAM238
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
DESCRIPTION
The BB119 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
hermetically sealed leaded glass
SOD27 (DO-35) package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VR
continuous reverse voltage
IF
continuous forward current
Tstg
storage temperature
Tj
operating junction temperature
MIN.
−
−
−55
−
MAX.
15
200
+150
150
UNIT
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
IR
reverse current
rs
diode series resistance
Cd
diode capacitance
C--C---d-d---(-(-1-4-0--V-V--)-)-
capacitance ratio
CONDITIONS
VR = 15 V; see Fig.3
VR = 15 V; Tj = 150 °C; see Fig.3
f = 200 MHz; note 1
VR = 4 V; f = 1 MHz; see Figs 2 and 4
VR = 10 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
Note
1. VR = 4 V.
MIN. TYP. MAX. UNIT
−
−
50 nA
−
−
2
µA
−
0.2 1.5 Ω
20 −
25 pF
−
17 −
pF
1.3 −
−
1996 May 03
2
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