BF763 Ver la hoja de datos (PDF) - Philips Electronics
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Fabricante
BF763 Datasheet PDF : 5 Pages
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Philips Semiconductors
NPN 2 GHz wideband transistor
Product specification
BF763
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CEO
V(BR)CBO
VCE sat
ICBO
hFE
fT
F
collector-emitter breakdown voltage IC = 1 mA; IB = 0
15
collector-base breakdown voltage IC = 10 µA; IE = 0
25
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA
−
collector cut-off current
IE = 0; VCB = 10 V
−
DC current gain
IC = 5 mA; VCE = 10 V
25
transition frequency
IC = 5 mA; VCE = 10 V; f = 100 MHz −
noise figure
IC = 5 mA; VCE = 10 V; f = 800 MHz; −
Tamb = 25 °C; Zs = 60 Ω
−
−
V
−
−
V
−
0.5 V
−
50 nA
−
250
1.8 −
GHz
5.0 −
dB
September 1995
3
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