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BF763

NPN 2 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 2 GHz wideband transistor

Product specification

BF763

DESCRIPTION

NPN transistor in a plastic SOT54

(TO-92 variant) envelope.

It is primarily intended for use in RF

amplifiers and oscillators.

PINNING

PIN

DESCRIPTION

Code: F763

1 emitter

2 base

3 collector

1

2

3

MSB034

Fig.1 SOT54.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V(BR)CEO

IC

Ptot

hFE

fT

collector-emitter breakdown voltage open base

15

DC collector current

−

total power dissipation

up to Tamb = 60 °C

−

DC current gain

IC = 5 mA; VCE = 10 V; Tj = 25 °C 25

transition frequency

IC = 5 mA; VCE = 10 V; f = 100 MHz −

−

−

V

−

25

mA

−

360 mW

−

250

1.8 −

GHz

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

IC

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

DC collector current

total power dissipation

storage temperature

junction temperature

open emitter

open base

up to Tamb = 60 °C

MIN.

−

−

−

−

−65

−

MAX.

15

25

25

360

150

150

UNIT

V

V

mA

mW

°C

°C

THERMAL RESISTANCE

SYMBOL

Rth j-a

PARAMETER

thermal resistance from junction to

ambient

CONDITIONS

in free air

THERMAL RESISTANCE

250 K/W

September 1995

2

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