BA318 Ver la hoja de datos (PDF) - Philips Electronics
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BA318 Datasheet PDF : 7 Pages
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Philips Semiconductors
High-speed diodes
Product specification
BA316; BA317; BA318
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
BA316
BA317
BA318
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 100 mA
see Fig.5
VR = 10 V
VR = 10 V; Tj = 150 °C
VR = 10 V
VR = 30 V
VR = 30 V; Tj = 150 °C
VR = 30 V
VR = 50 V
VR = 50 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
when switched from IF = 50 mA;
tr = 20 ns; see Fig.8
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
700 mV
850 mV
1100 mV
200 nA
100 µA
50 nA
200 nA
100 µA
50 nA
200 nA
100 µA
2 pF
4 ns
2.5 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
Note
1. Device mounted on a printed circuit-board without metallization pad.
VALUE
240
500
UNIT
K/W
K/W
1996 Sep 03
3
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