CHA5010B Ver la hoja de datos (PDF) - United Monolithic Semiconductors

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CHA5010B

X Band Driver Amplifier

United Monolithic Semiconductors 

CHA5010b

X Band Driver Amplifier

Electrical Characteristics (1)

Tamb = +25°C, Vd = 8V, Vg = -1.5V

Symbol

Parameter

Min Typ Max Unit

Fop Operating frequency range

9

10.5 GHz

G

Small signal gain @ Pin = +5dBm

14

15

dB

∆G Small signal gain flatness

± 1.5

dB

P1db Pulsed output power @ Pin = +13dBm

26

27

dBm

PAE Power added efficiency at saturation

15

%

VSWRin Input VSWR (2)

2.0:1

Id

Bias current

520

mA

(1) These values are representative of on-wafer pulsed measurements that are made without

bonding wires at the RF ports.

(2) Vd = 3.5V, Vg = -1.5V, [S] parameter measurements.

Absolute Maximum Ratings (1)

Tamb = +25°C

Symbol

Parameter

Vd

Positive supply voltage

Pdiss

Maximum power dissipated

Vg

Negative supply voltage

Values

+10

7.0 @ Ta = +25°C

4.3 @ Ta = +70°C

-3.5 to 0

Unit

V

W

V

Pin

Maximum peak input power overdrive (2)

+20

dBm

Ta

Operating temperature range

-25 to +70

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these paramaters may cause permanent damage.

(2) Duration < 1s.

Ref. : DSCHA50100096 - 05-Apr-00

2/4

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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