WS57C256F-70J Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

WS57C256F-70J

HIGH SPEED 32K x 8 CMOS EPROM

STMicroelectronics 

WS57C256F

PROGRAMMING INFORMATION

DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)

SYMBOLS

PARAMETER

MIN

MAX

UNITS

ILI

Input Leakage Current

(VIN = VCC or Gnd)

IPP

VPP Supply Current During

Programming Pulse (CE/ PGM = VIL)

ICC

VCC Supply Current (Note 8)

VOL

Output Low Voltage During Verify

(IOL = 16 mA)

VOH

Output High Voltage During Verify

(IOH = –4 mA)

–10

10

µA

60

mA

35

mA

0.4

V

2.4

V

NOTE:

8. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP.

9. VPP must not be greater than 13 volts including overshoot. During CE = PGM = VIL, VPP must not be switched from 5 volts to

12.5 volts or vice-versa.

10. During power up the PGM pin must be brought high (≥ VIH) either coincident with or before power is applied to VPP.

AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)

SYMBOLS

PARAMETER

MIN

TYP

MAX

UNITS

tAS

Address Setup Time

2

tCOH

CE High to OE High

2

tOES

Output Enable Setup Time

2

tOS

Data Setup Time

2

tAH

Address Hold Time

0

tOH

Data Hold Time

2

tDF

Chip Disable to Output Float Delay

0

tOE

Data Valid From Output Enable

tVS/ tCES

VPP Setup Time/CE Setup Time

2

tPW

PGM Pulse Width

100

tOCX

OE Low to CE "Don't Care"

2

µs

µs

µs

µs

µs

µs

130

ns

130

ns

µs

200

µs

µs

PROGRAMMING WAVEFORM

ADDRESSES

DATA

VPP

VPP

VCC

VIH

CE/PGM

VIL

VIH

OE

VIL

ADDRESS STABLE

tAS

DATA IN STABLE

HIGH Z

tOS

tOH

tOE

tAH

DATA OUT

VALID

tDF

tVS

tCES

tOCX

tCOH

tPW

tOES

3-16

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