1PS88SB82 Ver la hoja de datos (PDF) - Philips Electronics

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Fabricante

1PS88SB82

Schottky barrier triple diode

Philips Electronics 

Philips Semiconductors

Schottky barrier triple diode

Product specification

1PS88SB82

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to SOT363 standard mounting conditions.

VALUE

416

UNIT

K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

IR

reverse current

rD

diode forward resistance

Cd

diode capacitance

Note

1. Pulse test: pulse width = 300 µs; δ = 0.02.

CONDITIONS

TYP.

MAX.

UNIT

see note 1 and Fig.2

IF = 1 mA

−

IF = 30 mA

−

VR = 1 V; see Fig.3; note 1

−

f = 1 kHz; IF = 5 mA; see Fig.5 12

VR = 0 V; f = 1 MHz; see Fig.4 1

340

mV

700

mV

0.2

µA

−

Ω

−

pF

2001 Feb 16

3

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