RF2310 Ver la hoja de datos (PDF) - RF Micro Devices
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RF2310 Datasheet PDF : 10 Pages
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RF2310
4
WIDEBAND GENERAL PURPOSE AMPLIFIER
Typical Applications
• General Purpose High Bandwidth Gain
Blocks
• IF or RF Buffer Amplifiers
• Broadband Test Equipment
• Final PA for Medium Power Applications
• Driver Stage for Power Amplifiers
Product Description
The RF2310 is a general purpose, low-cost, high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 50Ω gain block. Applications
include IF and RF amplification in wireless voice and data
communication products operating in frequency bands up
to 2500MHz. The gain flatness over a very wide band-
width makes the device suitable for many applications.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified.
0.196
0.189
8° MAX
0° MIN
0.157
0.150
0.244
0.229
0.034
0.016
0.018
0.014
-A-
0.008
0.004
0.050
Dimensions in mm
0.068
0.053
0.009
0.007
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
4
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
VCC 1
GND 2
GND 3
RF IN 4
8 RF OUT
7 GND
6 GND
5 GND
Package Style: SOIC-8
Features
• DC to well over 2500MHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 5dB Noise Figure
• +19dBm Output Power
• Single 3.5V to 6V Positive Power Supply
Ordering Information
RF2310
Wideband General Purpose Amplifier
RF2310 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev C5 010717
4-75
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