TSH110ILT Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

TSH110ILT

Wide band low noise operational amplifiers

STMicroelectronics 

Electrical characteristics

TSH110-TSH111-TSH112-TSH113-TSH114

Table 4.

Symbol

Dual supply voltage, VCC=±6V, Rfb(1)= 680Ω, Tamb = 25°C (unless otherwise specified)

Parameter

Test conditions

Min. Typ. Max. Unit

ΔG Differential gain

Δφ Differential phase

AVCL=+2, RL=100Ω

F=4.5MHz, Vout=2Vpeak

0.05

%

0.05

°

Noise and harmonic performance

en Equivalent input voltage noise

in Equivalent input current noise

THD Total harmonic distortion

IM3 Third order inter modulation product

Frequency : 1MHz

AVCL=+2, F=2MHz

RL=100Ω

Vout=4Vpp

AVCL=+2, Vout=4Vpp

RL=100Ω

F1=1MHz, F2=1.1MHz

@900kHz

@1.2MHz

@3.1MHz

3

nV/√Hz

8.6

pA/√Hz

67.7

dB

82

dBc

84

77

@3.2MHz

73

Matching characteristics

Gf Gain flatness

Vo1/Vo2 Channel separation

F=(DC) to 6MHz

AVCL=+2, Vout=4Vpp

F=1MHz to 10MHz

0.1

dB

65

dB

1. Rfb is the feedback resistance between the output and the inverting input of the amplifier.

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